AlGaN/GaN polarization-doped field-effect transistor for microwave power applications
نویسندگان
چکیده
منابع مشابه
Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor
Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gatessurrounding the channel that employs el...
متن کاملCurrent Voltage and Transconductance 2-D Model for Dual Material Gate AlmGa1-mN/GaN Modulation Doped Field Effect Transistor for High Frequency Microwave Circuit Applications
In this paper we present current voltage and trans-conductance model for Dual Material Gate AlGaN/GaN HEMT. Our proposed model demonstrates complete charge control in 2DEG based channel of the device in order to investigate the current-voltage as well as transfer characteristics of the device under various gate and drain biases. The proposed device structure uses GaN material capable to withsta...
متن کاملGallium Nitride (GaN) Microwave Transistor Technology For Radar Applications
This paper reviews the relative merits of Si, GaAs, SiC, and GaN materials and describes how the attributes of each impact the operation of microwave transistors for the generation of high RF output power, on the order of hundreds to thousands of watts, as necessary for radars systems. It is shown that the superior physical attributes of GaN lead to microwave transistors that are extremely well...
متن کاملJunction Field Effect Transistor (JFET)
The single channel junction field-effect transistor (JFET) is probably the simplest transistor available. As shown in the schematics below (Figure 6.13 in your text) for the n-channel JFET (left) and the p-channel JFET (right), these devices are simply an area of doped silicon with two diffusions of the opposite doping. Please be aware that the schematics presented are for illustrative purposes...
متن کاملSubmicrometer Polymer Field - Effect Transistor
Recent developments towards future polymer electronics are aimed at different applications as organic displays, complementary circuits, and all-polymer integrated circuits [1-3]. Basic devices are organic field-effect transistors (OFET, cross section in Figs.2 and 3) with an active layer made from an organic material. Until now the achieved performance of OFET's is not sufficient for envisaged ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2004
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1652254